Progress in Copper-based Wafer Bonding
نویسندگان
چکیده
This article discusses a method of wafer-to-wafer bonding using metallic copper as the bonding medium. This method is commonly known as thermo-compression bonding. Bonding process is described and characterization results are presented. Reliability issues related to voids formation in the bonded layer is discussed. A survey on progress of copper-based wafer bonding and its application for 3-D ICs is included.
منابع مشابه
Morphology and bond strength of copper wafer bonding
The morphology and bond strength of copper-bonded wafer pairs prepared under different bonding/annealing temperatures and durations are presented. The interfacial morphology was examined by transmission electron microscopy (TEM) while the bond strength was examined from a diesaw test. Physical mechanisms explaining the different roles of post-bonding anneals at temperatures above and below 300°...
متن کاملAn Evaluation of Three Dimensional Integration Technology
The first part of the research is an overview of existing three-dimensional (3-D) integration technologies such as wafer bonding, selective epitaxy, multi-chip modules, and micromaching (MEMS) methods. Each technological option was evaluated based on several variables, which include both processing constraints, applications, and viability. Indirect wafer bonding, specifically using copper metal...
متن کاملReview of Direct Metal Bonding for Microelectronic Interconnections
-Microelectronic interconnections require advanced joining techniques. Direct metal bonding methods, which include thercomsonic and thermocompression bonding, offer remarkable advantages over soldering and adhesives joining. These processes are reviewed in this paper. The progress made in this area is outlined. Some work concerned with the bonding modeling is also presented. This model is based...
متن کاملLow Temperature Copper-Nanorod Bonding for 3D Integration
Wafer bonding is an emerging technology for fabrication of complex three-dimensional (3D) structures; particularly it enables monolithic wafer-level 3D integration of high performance, multi-function microelectronic systems. For such a 3D integrated circuits, lowtemperature wafer bonding is required to be compatible with the back-end-of-the-line processing conditions. Recently our investigation...
متن کاملHybrid Metal/Polymer Wafer Bonding Platform
This chapter provides an overview of a hybrid metal/polymer wafer bonding plat-form using damascene-patterned intermediate layers for wafer bonding and elec-trical interconnections. This hybrid bonding platform combines the advantagesof metal-to-metal bonding (for direct electrical interstrata interconnection) andpolymer bonding (for robust thermomechanical wafer bonding strengt...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2007